STT3962NE

Elektronische Bauelemente STT3962NE 2.3A , 60V , RDS(ON) 0.153 Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7 inch TSOP-6 A E L 654 B 123 F DG K C H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. G1 ESD Protection Diode 2KV S2 G2 D1 S2 D2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 10 sec Steady State Notes: 1. S...