isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Col...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Hammer driver,pulse motor drive applications. ·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1416
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isc Silicon
NPN Darlington Power
Transistor
2SD1416
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC...