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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-state Resistance
RDS(on) = 2. 8 Ω MAX. (VGS = 10 V, ID = 2. 0 A)
• LOW Ciss Ciss = 1 000 pF TYP. • High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±3. 5
A
Drain Current (pulse)
ID (pulse)* ±14
A
Total Power Dissipation (TC = 25 °C) PT1
35 W
Total Power Dissipation (T...