VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Bas...
VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance
Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base common cathode
4
D-PAK (TO-252AA)
Base common cathode
4
13
Anode
2 Anode
Common cathode
VS-6CUT10-E
PRODUCT SUMMARY
Package
IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS
2
Common 1 cathode 3
Anode
Anode
VS-6CWT10FN-E
D-PAK (TO-252AA), I-PAK (TO-251AA)
2x3A 100 V 0.63 V 1 mA at 125 °C 175 °C Common cathode 12 mJ
FEATURES 175 °C high performance
Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Specific for PV cells bypass diode High efficiency SMPS High frequency switching Output rectification Reverse battery protection Freewheeling DC/DC systems Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM VF
3 Apk, TJ = 125 °C (typical, per leg)
TJ Range
VALUES 100 0.6
- 55 to 175
UNITS V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage
SYMBOL TEST CONDITIONS VR TJ = 25 °C
VS-6CUT10-E VS-6CWT10FN-E
100
UNITS V
Document Number: 94662 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
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