BS616LV2016

Very Low Power CMOS SRAM 128K X 16 bit Pb-Free and Green package materials are compliant to RoHS BS616LV2016 n FEATURES Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 0.1uA (Typ.) at 25 OC VCC = 5.0V Operation current : 62mA (Max.) at 55ns 8mA (Max.) at 1MHz Standby current : 0.6uA (Typ.) at 25OC Ÿ High speed access time : -55 55ns(Max.) at VCC=3.0~5.5V -70 70ns(Max.) at VCC=2.7~5.5V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation Ÿ Data retention supply voltage as low as 1.5V n POWER CONSUMPTION n DESCRIPTION The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.1uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV2016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2016 is available in DICE form, JEDEC standard 44-pin TSOP...