PMSTA05

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D102 PMSTA05; PMSTA06 NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 16 1999 Apr 29 NXP Semiconductors NPN general purpose transistors Product data sheet PMSTA05; PMSTA06 FEATURES High current (max. 500 mA) Low voltage (max. 80 V). APPLICATIONS Primarily intended for telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: PMSTA55 and PMSTA56. MARKING TYPE NUMBER PMSTA05 PMATA06 MARKING CODE(1) ∗1H ∗1G Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. handbook, halfpage 3 1 Top view 1 2 MAM062 3 2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage PMSTA05 PMSTA06 collector-emitter voltage PMSTA05 PMSTA06 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C MIN. MAX. UNIT − 60 V − 80 V − 60 V − 80 V −4V − 500 mA − 500 mA − 500 mA − 200 mW −65 +150 °C − 150 °C −65 +150 °C 1999 Apr 29 2 NXP Semiconductors NPN general purpose transistors Product data sheet PMSTA05; PMSTA06 THERMAL CHARACT...