HX5N80

HX5N80 4.8 Amps，800Volts N-Channel MOSFET ■ Description The HX5N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features z RDS(ON) = 2.6Ω@VGS = 10 V z Low gate charge ( typical 25nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability ■ Symbol Power MOSFET ■ Ordering Information Order Number Normal Lead Free Plating HX5N80(C)-TA3-T HX5N80(C)L-TA3-T HX5N80(C)-TF3-T HX5N80(C)L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source Package TO-220 TO-220F Pin Assignment 123 GDS GDS HX5N80(C)L-TA3-T (1)T:Tube,R:Tape Reel （1）Packing Type （2）Package Type （3）Lead Plating (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Symbol Ratings TO-220 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Tc=25℃ Tc=100℃ (Note 1) VDSS VGSS ID IDP 800 ±30 4.8 4.8＊ 3.04 3.04 19.2 19.2＊ Avalanche Energy Peak Diode Recovery dv/dt Repetitive (Note 1) Single Pulse (Note 2) (Note 3) EAR EAS dv/dt 14 590 4.0 Total Power Dissipation Tc=25℃ Derate above 25℃ PD 140 48 1.12 0.39 Junction Temperature TJ +150 Storage Temperature ＊Drain current limited by maximum junction temperature. TSTG -55~+150 Packing Tube Tube Units ...