Document
Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
Available
RoHS*
COMPLIANT
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 6.7 mH, RG = 25 Ω, IAS = 9.8 A (see fig. 12). c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91150 S09-0013-Rev. A, 19-Jan-09
LIMIT
200 ± 20 9.8 6.2 39 0.32 430 9.8 4.0 40 5.0 - 55 to + 150 300d 10 1.1
UNIT
V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
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IRFI640G, SiHFI640G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
RthJA RthJC
TYP. -
MAX. 65 3.1
UNIT °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS ΔVDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.9 Ab
VDS = 50 V, ID = 5.9 Ab
200 -
-V
- 0.29 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 µA
- - 250
- - 0.18 Ω
5.2 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Ciss Coss Crss
C
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
f = 1.0 MHz
- 1300 - 400 - 130 - 12 -
pF
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 10 V
ID = 18 A, VDS = 160 V, see fig. 6 and 13b
VDD = 100 V, ID = 18 A, RG = 9.1 Ω, RD= 5.4 Ω,
see fig. 10b
-
- 70 - 13 nC - 39 14 51 -
ns 45 36 -
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of G
LS die contact S
- 4.5 nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 9.8 A
- - 39
Body Diode Voltage
VSD
TJ = 25 °C, IS = 9.8 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
- 300 610 ns TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb
Qrr - 3.4 7.1 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2
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Document Number: 91150 S09-0013-Rev. A, 19-Jan-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFI640G, SiHFI640G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91150 S09-0013-Rev. A, 19-Jan-09
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IRFI640G, SiHFI640G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Ty.