DatasheetsPDF.com

IRFI640G Dataheets PDF



Part Number IRFI640G
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFI640G DatasheetIRFI640G Datasheet (PDF)

Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating Available RoHS* COMPLIANT • Low Thermal Resistance • Lead (Pb)-free Ava.

  IRFI640G   IRFI640G


Document
Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating Available RoHS* COMPLIANT • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 6.7 mH, RG = 25 Ω, IAS = 9.8 A (see fig. 12). c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91150 S09-0013-Rev. A, 19-Jan-09 LIMIT 200 ± 20 9.8 6.2 39 0.32 430 9.8 4.0 40 5.0 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m www.vishay.com 1 IRFI640G, SiHFI640G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) RthJA RthJC TYP. - MAX. 65 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 200 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 5.9 Ab VDS = 50 V, ID = 5.9 Ab 200 - -V - 0.29 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 µA - - 250 - - 0.18 Ω 5.2 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Ciss Coss Crss C VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 f = 1.0 MHz - 1300 - 400 - 130 - 12 - pF Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VGS = 10 V ID = 18 A, VDS = 160 V, see fig. 6 and 13b VDD = 100 V, ID = 18 A, RG = 9.1 Ω, RD= 5.4 Ω, see fig. 10b - - 70 - 13 nC - 39 14 51 - ns 45 36 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 nH - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 9.8 A - - 39 Body Diode Voltage VSD TJ = 25 °C, IS = 9.8 A, VGS = 0 Vb - - 2.0 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr - 300 610 ns TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb Qrr - 3.4 7.1 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 www.vishay.com 2 Document Number: 91150 S09-0013-Rev. A, 19-Jan-09 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted IRFI640G, SiHFI640G Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC= 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91150 S09-0013-Rev. A, 19-Jan-09 www.vishay.com 3 IRFI640G, SiHFI640G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Ty.


D6015V24H IRFI640G LP28056


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)