MMIS60R580P

MMIS60R580P Datasheet MMIS60R580P 600V 0.58Ω N-channel MOSFET  Description MMIS60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 18 Unit V Ω V A nC  Package & Internal Circuit D G D S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMIS60R580PTH 60R580P Temp. Range -55 ~ 150℃ Package TO-251-VS (IPAK-VS) Mar. 2016 Revision 1.1 1 Packing Tube RoHS Status Halogen Free MagnaChip Semiconductor Ltd. MMIS60R580P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Symbol VDSS VGSS ID IDM PD EAS dv/dt Rating 600 ±30 8 5 24 70 170 50 Unit V V A A A W mJ V/ns Note TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature...