NexFET Power MOSFETs
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16414Q5
Features
Ultra Low Qg & Qgd Low Thermal Resistance Avalanche R...
Description
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16414Q5
Features
Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating
G
S S S
D D D
D
S1 S2 S3 G4
D
8D 7D 6D 5D
RoHS Compliant
Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS Qg Qgd
RDS(on)
Vth
25 16.6 4.4 VGS=4.5V VGS=10V 1.6
2.1 1.5
V nC nC m m V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω
1. RθJA = 390C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB. 2. See Figure 10
RDS(ON) vs. VGS
6.0
5.0
ID = 30A
Gate Charge
12
VDS = 12.5V 10 ID = 30A
4.0 8
TC = 125ºC
3.0
TC = 25ºC
6
2.0 4
Value
25 +16 / -12
100 34 213 3.2 -55 to 150 500
Units
V V A A A W °C mJ
RDS(on) - On Resistance (m ) V GS - Gate Voltage (V)
1.0 2
0.0 0
2 4 6 8 10 VGS - Gate to Source Voltage (V)
12
Ordering Information
Type
CSD16414Q5
Package
QFN 5X6 Plastic Package
© 2009 CICLON Semiconductor Device Corp., rev 2.1 All rights reserved.
0
0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC)
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16414Q5
Electrical Characteristics (...
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