CSD16409Q3

N-Channel CICLON NexFET™ Power MOSFETs CSD16409Q3 Features Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D RoHS Compliant Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 4.0 1.0 VGS=4.5V VGS=10V 2.0 9.5 6.2 V nC nC mΩ mΩ V Maximum Values (TA=25oC unless otherwise stated) Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Continuous Drain Current, TC = 25°C ID Continuous Drain Current1 IDM PD TJ, TSTG EAS Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =38A, L = 0.1mH, RG = 25Ω RDS(on) - On Resistance (m Ω ) VGS - Gate Voltage (V) 1. Rθja = 470C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB. 2. Pulse width ≤300 µs, duty cycle ≤ 2% RDS(ON) vs. VGS 20 18 ID = 17A 16 14 TC = 125ºC 12 TC = 25ºC 10 8 6 4 2 0 2 4 6 8 10 12 VGS - Gate to Source Voltage (V) Gate Charge 12 VDS = 12.5V 10 ID = 17A 8 6 4 2 0 02 Value 25 +16 / -12 60 15 90 2.6 -55 to 150 72 Units V V A A A W °C mJ 46 Qg - Gate Charge (nC) 8 10 Ordering Information Type CSD16409Q3 Package QFN 3.3 X 3.3 Plastic Package © 2008 CICLON Semiconductor Device Corp., rev 2.2 All rights reserved. Package Media 13 inch reel Qty 2500 Ship Tape and Reel www.ciclonsemi.com N-Channel CICLON NexFET™ Power MOSFETs CSD16409Q3 Electrical Characteristics (TA = ...