SEP8736

SEP8736 AlGaAs Infrared Emitting Diode FEATURES Side-looking plastic package 10¡ (nominal) beam angle 880 nm wavelength Enhanced coupling distance Mechanically and spectrally matched to SDP8436 phototransistor DESCRIPTION The SEP8736 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The body and integral lens design combines the mounting advantage of a side-emitting package with the narrow emission pattern of a T-1 style device. The SEP8736 IRED is designed for those applications which require longer coupling distances than standard side-emitting devices can provide, such as touch screens. The IRED is also especially well suited to applications in which adjacent channel crosstalk could be a problem. INFRA-80.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_070.ds4 h Honeywell reserves the right to make 56 changes in order to improve design and supply the best products possible. SEP8736 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. SCH...