600V N-Channel MOSFET
600V N-Channel MOSFET
General Features
Low ON Resistance Low Gate Charge (typical 54nC) Fast Switching 100% Aval...
Description
600V N-Channel MOSFET
General Features
Low ON Resistance Low Gate Charge (typical 54nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available
Applications
High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power
FTP10N60/FTA10N60
BVDSS 600V
RDS(ON) (Max.) 0.75Ω
ID 10.0A
Ordering Information
Part Number Package
FTP10N60
TO-220
FTP10N60G
TO-220
FTA10N60
TO-220F
FTA10N60G
TO-220F
FTA10N60Z
TO-220FG
FTA10N60GZ TO-220FG
Marking
FTP10N60 FTP10N60G FTA10N60 FTA10N60G FTA10N60Z FTA10N60GZ
Remark
RoHS Halogen-free
RoHS Halogen-free
RoHS Halogen-free
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-to-Source Voltage[1]
ID Continuous Drain Current
ID@100℃ Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2]
Power Dissipation PD Derating Factor above 25℃
TC=25℃ unless otherwise specified
FTP10N60
FTA10N60
Unit
600 V
10.0 10.0*
Figure 3
A
Figure 6
156 50 W
1.25 0.4 W/℃
VGS EAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy L=12mH, ID=10A Peak Diode Recovery dv/dt[3]
±30 V 600 mJ 4.5 V/ns
TL
Soldering Temperature Distance of 1.6mm from case for 10 seconds
300
TJ and TSTG Operating and Storage Temperature Range
-55 to 150
*Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
℃
ARK Microelectronics Co., Ltd.
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