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FTP10N60C Dataheets PDF



Part Number FTP10N60C
Manufacturers IPS
Logo IPS
Description N-Channel MOSFET
Datasheet FTP10N60C DatasheetFTP10N60C Datasheet (PDF)

FTP10N60C FTA10N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve Ordering Information PART NUMBER FTP10N60C FTA10N60C PACKAGE TO-220 TO-220F VDSS 600 V RDS(ON) (Max.) 0.85 Ω ID 10 A D BRAND FTP10N60C FTA10N60C GDS TO-220 G DS TO-220F Packages Not to Scale G S Absolute Maximum Ratings TC=25 oC unless .

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FTP10N60C FTA10N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve Ordering Information PART NUMBER FTP10N60C FTA10N60C PACKAGE TO-220 TO-220F VDSS 600 V RDS(ON) (Max.) 0.85 Ω ID 10 A D BRAND FTP10N60C FTA10N60C GDS TO-220 G DS TO-220F Packages Not to Scale G S Absolute Maximum Ratings TC=25 oC unless otherwise specified Symbol Parameter FTP10N60C FTA10N60C Units VDSS ID ID@ 100 oC IDM PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC (NOTE *1) (NOTE *2) 600 10.0 10.0* Figure 3 Figure 6 216 50 1.72 0.40 V A W W/ oC VGS EAS IAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Engergy L=10 mH, ID=6.7 Amps Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE *3) ± 30 225 Figure 8 3.0 V mJ A V/ ns TL TPKG TJ and TSTG Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range 300 260 -55 to 150 oC * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device. Thermal Resistance Symbol Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient FTP10N60C FTA10N60C 0.58 2.5 62 100 Units oC/W Test Conditions Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC. 1 cubic foot chamber, free air. ©2007 InPower Semiconductor Co., Ltd. FTP10N60C/FTA10N60C REV. A. Oct. 2007 OFF Characteristics TJ=25 oC unless otherwise specified Symbol Parameter Min. Typ. BVDSS ∆BVDSS/∆ TJ Drain-to-Source Breakdown Voltage BreakdownVoltage Temperature Coefficient, Figure 11. 600 --- 0.631 Max. -- -- -- -- 25 IDSS Drain-to-Source Leakage Current -- -- 250 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage -- -- 100 -- -- -100 Units V V/ oC µA nA Test Conditions VGS=0V, ID=250µA Reference to 25 oC, ID=250 µA VDS=600V, VGS=0V VDS=480V, VGS=0V TJ=125 oC VGS=+30 V VGS= -30V ON Characteristics TJ=25 oC unless otherwise specified Symbol Parameter Min. Typ. RDS(ON) VGS(TH) Static Drain-to-Source On-Resistance Figure 9 and 10. -- 0.70 Gate Threshold Voltage, Figure 12. 2.0 -- gfs Forward Transconductance -- 6.8 Max. 0.85 4.0 -- Units Ω V S Test Conditions VGS=10V, ID=6.0A (NOTE *4) VDS=VGS, ID=250µA VDS=15V, ID=10A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature Symbol Ciss Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. --- -- Typ. 1882 170 20 Max. --- -- Units pF Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (“Miller”) Charge -- 39.0 --- 9.5 --- 17.6 -- nC Test Conditions VGS=0 V VDS=25 V f =1.0MHz Figure 14 VDD=300V ID=10A Figure 15 Resistive Switching Characteristics Symbol Parameter td(ON) trise td(OFF) tfall Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Essentially independent of operating temperature Min. Typ. Max. Units Test Conditions -- 19 --- 16 --- 49 --- 16 -- ns VDD=300V ID=10A VGS=10 V RG=9.1 Ω ©2007 InPower Semiconductor Co., Ltd. FTP10N60C/FTA10N60C REV. A . Oct. 2007 Page 2 of 9 Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 10 A ISM Maximum Pulsed Current (Body Diode) -- -- 40 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 352 528 ns Qrr Reverse Recovery Charge -- 2.9 4.35 nC Test Conditions Integral pn-diode in MOSFET IS=10A, VGS=0V VGS=0 V IF=10A, di/dt=100 A/µs Notes: *1. TJ = +25 oC to +150 oC. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD= 10 A, di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC. *4. Pulse width < 380µs; duty cycle < 2%. ©2007 InPower Semiconductor Co., Ltd. FTP10N60C/FTA10N60C REV. A . Oct. 2007 Page 3 of 9 ZθJC, Thermal Impedance (Normalized) PD, Power Dissipation (W) Duty Factor 1.000 50% 20% 0.100 10% 5% 2% 0.010 1% 0.001 single pulse 0.0001 1E-6 10E-6 Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 100E-6 1E-3 10E-3 tp, Rectangular Pulse Duration (s) 100E-3 PDM t1 t2 NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x ZθJC x RθJC+TC 1E+0 10E+0 Figure 2. Maximum Power Dissipation vs Case Temperature 250 200 150 100 50 0 25 50 75 100 125 150 TC, Case Temperature (oC) Figure 4. Typical Output Characteristics 20 PULSE DURATION = 250 µS DUTY FACTOR = 0.5% MAX, TC = 25 oC 15 10 VGS = 15V VGS = 7.0V VGS = 6.5V VGS = 6.0V 5 VGS = 5.5V VGS = 5.0V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) RDS(ON), Drain-to-Source ON Resistan.


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