FTA07N60

600V N-Channel MOSFET General Features ¾ Low ON Resistance ¾ Low Gate Charge (typical 38.6nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant ¾ Halogen-free available Applications ¾ High Efficiency SMPS ¾ Adaptor/Charger ¾ Active PFC ¾ LCD Panel Power FTP07N60/FTA07N60 BVDSS 600V RDS(ON) (Max.) 1.1Ÿ ID 7.0A Ordering Information Part Number Package FTP07N60 TO-220 FTP07N60 TO-220 FTA07N60 TO-220F FTA07N60 TO-220F Marking FTP07N60 FTP07N60G FTA07N60 FTA07N60G Remark RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol Parameter VDSS Drain-to-Source Voltage[1] ID Continuous Drain Current ID@100ć Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2] Power Dissipation PD Derating Factor above 25ć TC=25ć unless otherwise specified FTP07N60 FTA07N60 Unit 600 V 7.0 7.0* Figure 3 A Figure 6 139 31 W 1.1 0.25 W/ć VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=20mH, ID=6.0A Peak Diode Recovery dv/dt[3] ±30 V 360 mJ 4.5 V/ns TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range -55 to 150 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. ć ARK Microelectronics Co., Ltd. w w w. a r k - m i c r o. c o m 1 / 11 Rev. 2.0 Feb. 2011 Thermal Characteristics Symbol Parameter RșJC Thermal Resistanc...