Document
FTW20N50A
General Description˖
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features˖
z Fast Switching z Low ON Resistance(RdsoQİ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche energy Test
Applications˖
Power switch circuit of electron ballast and adaptor.
Absolute˄Tc= 25ć unless otherwise specified˅˖
VDSS ID PD (TC=25ć) RDS(ON)
TO–3P(N)
500 20 230 0.26
V A W
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJˈTstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
Rating
500 20 12 80 f30 950 90 14 4.0 230 1.85 150ˈ–55 to 150 FTP04N 300
Units
V A A A V mJ mJ A V/ns W W/ć ć ć
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 10
FTW20N50A REV. A. Jul. 2009
Electrical Characteristics˄Tc= 25ć unless otherwise specified˅˖
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS BVDSS/TJ
IDSS
IGSS(F) IGSS(R)
Drain to Source Breakdown Voltage Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage Gate to Source Reverse Leakage
VGS=0V, ID=250μA
ID=250uA,Reference2ć VDS = 500V, VGS= 0V, Ta = 25ć VDS =400V, VGS= 0V, Ta = 125ć VDS =0V, VGS= 30V
VDS =0V, VGS= -30V
Rating
Min. Typ. Max.
500 -- --- 0.55 --- -- 10
100 -- -- 100 -- -- -100
Units
V V/ć
μA
nA nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tpİ380μs,¥İ2%
Test Conditions
VGS=10V,ID=10A VDS = VGS, ID = 250μA
Rating
Min. Typ. Max.
-- 0.26 0.3 2.0 -- 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON) tr td(OFF) tf Qg Qgs Qgd
Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge
Test Conditions
VDS=15V, ID =10A VGS = 0V VDS = 25V f = 1.0MHz
Test Conditions
ID =20A VDD = 250V RG = 25
ID =20A VDD =400V VGS = 10V
Rating
Min. Typ. Max.
13 17 --- 4500 6000 -- 350 460 -- 65 80
Units S pF
Rating
Min. Typ. Max.
-- 55 120 -- 145 310 -- 280 770 -- 135 370 -- 130 170 -- 20 -- 45
Units ns nC
©2009 InPower Semiconductor Co., Ltd.
Page 2 of 10
FTW20N50A REV. A. Jul. 2009
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Pulse width tpİ380μs,¥İ2%
Test Conditions
IS=20A,VGS=0V IS=20A,Tj = 25eC dIF/dt=100A/us, VGS=0V
Min.
------
Rating
Typ. Max.
-- 20 -- 80 -- 1.5 480 -7.7 --
Units
A A V ns nC
Symbol R©JC R©JA
Parameter
Junction-to-Case Junction-to-Ambient
Max. 0.54 40
Units ć/W ć/W
a1˖Repetitive rating; pulse width limited by maximum junction temperature
a2˖L=10.0mH, ID=20A, Start TJ=25ć a3˖ISD =20A,di/dt İ300A/us,VDDİBVDS, Start TJ=25ć
©2009 InPower Semiconductor Co., Ltd.
Page 3 of 9
FTW20N50A REV. A. Jul. 2009
Id , Drain Current , Amps
&KDUDFWHULVWLFV&XUYH˖
100
100s 10s 1 ms
10 10 ms
DC
1 OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25ć Single Pulse
PD , Power Dissipation ˈWatts
240 180 120 60
Id , Drain Current , Amps
0.1 1 10 100 1000 Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximun Forward Bias Safe Operating Area
25
20
15
10
5
Id , Drain Current , Amps
0 0 25 50 75 100 125 150 TC, Case Temperature , C
Figure 2 Maximun Power Dissipation vs Case Temperature
70
PULSE DURATION=250s DUTY FACTOR=0.5%MAX
60 Tc = 25ć
50
VGS=15V
VGS=8V
40 VGS=5.5 30 VGS=5V
20
VGS=4.5
10
0 25 50 75 100 125 150 TC, Case Temperature ˈC
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
0 0
10 20 30 40 Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
50
50%
0.1
10%
20%
5%
0.01
2%
PDM
t1 t2
Single pulse
0.001 0.00001
1% NOTES˖ DUTY FACTOR ˖D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
1
10
Thermal Impedance, Normalized
©2009 InPower Semiconductor Co., Ltd.
Page 4 of 10
FTW20N50A REV. A. Jul. 2009
1000
100
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGIO.