FTP18N06N

60V N-Channel MOSFET General Features ¾ Low ON Resistance ¾ Low Gate Charge (typical 20nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ Optimized Bvdss Capability ¾ RoHS Compliant ¾ Halogen-free available BVDSS 60V FTP18N06N RDS(ON) (Max.) 18mŸ ID 68A Applications ¾ Power Supply ¾ DC-DC Converters Ordering Information Part Number Package FTP18N06N TO-220 Marking FTP18N06N Absolute Maximum Ratings specified Symbol Parameter VDSS Drain-to-Source Voltage[1] ID Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2] Power Dissipation PD Derating Factor above 25ć TC=25ć unless otherwise FTP18N06N 60 68 272 115 0.77 Unit V A W W/ć VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=11.9 ID=5.5A Peak Diode Recovery dv/dt[3] ±20 V 360 mJ 4.5 V/ns TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range -55 to 175 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the ³$EVROXWH0D[LPXP5DWLQJV´PD\FDXVHSHUPDQHQWGDPDJHWRWKHGHYLFH ć Thermal Characteristics Symbol Parameter Rș-& Thermal Resistance, Junction-to-Case Rș-$ Thermal Resistance, Junction-to-Ambient FTP18N06N 1.3 62 Unit ć/W ARK Microelectronics Co., Ltd. w w w. a r k - m i c r o. c o m 1/7 Rev. 2.0 Mar. 2011 FTP18N06N Electrical Characteristics OFF Characteristics Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-So...