JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC3199 TRANSISTOR (NPN)
FEATU...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate
Transistors
2SC3199
TRANSISTOR (
NPN)
FEATURES z High Current Capability z High DC Current Gain z Small Package
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
APPLICATIONS
z Audio Amplifier Applications z AM Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO
BDTICIC
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Value 50 50 5 0.15
Unit V V V A
PC Collector Power Dissipation
400 mW
RθJA
Thermal Resistance From Junction To Ambient
312
℃/W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) Cob fT
Test conditions IC= 0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,IC=0 VCB=50V,IE=0 VEB=5V,IC=0 VCE=6V, IC=2mA IC=100mA,IB=10mA VCB=10V,IE=0, f=1MHz VCE=10V,IC=1mA
Min Typ Max Unit 50 V 50 V 5V
0.1 μA 0.1 μA 70 700 0.25 V 3.5 pF 80 MHz
CLASSIFICATION OF hFE
RANK
O
RANGE
70-140
Y 120-240
GR 200-400
BL 300-700
www.BDTIC.com/jcst
A,Dec,2010
...