Document
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220C package ·High collector breakdown voltage
: VCEO=400V(Min) ·Excellent switching time
: tr=1.0µs(Max.) : tf=1.0µs(Max.
APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Product Specification
2SC2535
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
Ta=25 TC=25
VALUE 500 400 6 5 1 1.5 40 150
-55~150
UNIT V V V A A
W
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=3A ; VCE=5V
Switching times
tr Rise time tstg Storage time tf Fall time
VCC=200V; IB1=-IB2=0.3A;RL=68> Duty cycle@1%
Product Specification
2SC2535
MIN TYP. MAX UNIT 400 V 500 V
1.0 V 1.5 V 100 µA 1 mA 10
1.0 µs 2.5 µs 1.0 µs
2
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com PACKAGE OUTLINE
Product Specification
2SC2535
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2535
4
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