DatasheetsPDF.com

C2535 Dataheets PDF



Part Number C2535
Manufacturers SavantIC
Logo SavantIC
Description 2SC2535
Datasheet C2535 DatasheetC2535 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC2535 Absolute maximum ratings(Ta=25 ).

  C2535   C2535



Document
SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC2535 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current IB Base current PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 500 400 6 5 1 1.5 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current VCB=400V ;IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=3A ; VCE=5V Switching times tr Rise time tstg Storage time tf Fall time VCC=200V; IB1=-IB2=0.3A;RL=68> Duty cycle@1% Product Specification 2SC2535 MIN TYP. MAX UNIT 400 V 500 V 1.0 V 1.5 V 100 µA 1 mA 10 1.0 µs 2.5 µs 1.0 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC2535 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC2535 4 .


FDC37M605 C2535 RS401


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)