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PHPT60606NY

NXP
Part Number PHPT60606NY
Manufacturer NXP
Description NPN high power bipolar transistor
Published Mar 25, 2015
Detailed Description PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN ...
Datasheet PDF File PHPT60606NY PDF File

PHPT60606NY
PHPT60606NY


Overview
PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1.
General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60606PY 2.
Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified.
3.
Applications • Power management • Load switch • Linear mode voltage regulator • Backlighting applications • Relay replacement • Motor drive 4.
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