FDBL0630N150

FDBL0630N150 N-Channel Power Trench® MOSFET FDBL0630N150 N-Channel Power Trench® MOSFET 150V, 169A, 6.3mΩ November 2014 Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch D G S For  current  package  drawing,  please  refer  to  the  Fairchild  website at https://www.fairchildsemi.com/evaluate/package‐ specifications/packageDetails.html?id=PN_PSOFA‐008 MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 150 ±20 169 See Figure4 502 500 3.3 -55 to + 175 0.3 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking FDBL0630N150 Device FDBL0630N150 Package MO-299A Reel Size - Tape Width - Quantity - Notes: 1: Current is limited by junction temperature. m23pr::oeRSusnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan0ui.nnm...