FDBL0120N40

FDBL0120N40 N-Channel PowerTrench® MOSFET FDBL0120N40 N-Channel PowerTrench® MOSFET 40 V, 240 A, 1.2 mΩ November 2014 Features „ Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch D G S For current package drawing, please refer to the Fairchild web‐ site at https://www.fairchildsemi.com/evaluate/package‐spec‐ ifications/packageDetails.html?id=PN_PSOFA‐008 MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 240 See Figure 4 316 300 2.0 -55 to + 175 0.5 43 Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 79.5A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal...