DatasheetsPDF.com

3DD5011A9

Huajing Microelectronics

Silicon NPN Bipolar Transistor

Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description:...


Huajing Microelectronics

3DD5011A9

File Download Download 3DD5011A9 Datasheet


Description
Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description: 3DD5011A9, silicon NPN low frequency power transistor, is used to colour TV switching regulator. Package:TO-220F. 2 Characteristics: ● Low switching power dissipation ● Low reversing leaking current ● Good high-temperature characteristic ● Good current characteristic ● High reliability 3 Application: The device is mainly used in 14 and 21 inch colour TV switching regulator. Typical Data VCEO IC Ptot(TC=25℃) 600 10 40 V A W 12 3 1. B 2. C 3. E Equivalent circuit C B E The name and content of poisonous and harmful material in products Part’s Name hazardous substance CONTENT Pb ≤0.1% Hg ≤0.1% Cd ≤0.01% Cr(VI) ≤0.1% PBB ≤0.1% PBDE ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○○ ○ ○○ ○:means the hazardous material is under the criterion of SJ/T11363-2006. ×:means the hazardous material exceeds the criterion of SJ/T11363-2006. Note The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s ROHS. WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 / 5 2008 Huajing Discrete Devices 4 Electrical Characteristics Maximum Ratings Except for Other Prescription,Ta= 25℃ Parameter Note Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Power Dissipati...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)