Huajing Discrete Devices
○R
Silicon NPN Bipolar Transistor for Low-frequency
Amplification
3DD5011A9
1 Description:...
Huajing Discrete Devices
○R
Silicon
NPN Bipolar
Transistor for Low-frequency
Amplification
3DD5011A9
1 Description: 3DD5011A9, silicon
NPN low frequency power
transistor, is used to colour TV switching
regulator. Package:TO-220F.
2 Characteristics: ● Low switching power dissipation ● Low reversing leaking current ● Good high-temperature characteristic
● Good current characteristic ● High reliability 3 Application:
The device is mainly used in 14 and
21 inch colour TV switching
regulator.
Typical Data VCEO IC Ptot(TC=25℃)
600 10 40
V A W
12 3
1. B 2. C 3. E
Equivalent circuit
C
B
E
The name and content of poisonous and harmful material in products
Part’s Name
hazardous substance
CONTENT
Pb ≤0.1%
Hg ≤0.1%
Cd ≤0.01%
Cr(VI) ≤0.1%
PBB ≤0.1%
PBDE ≤0.1%
Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound
○
○
○
○
○
○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder
× ○○ ○ ○○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006. Note
The plumbum element of solder exist in products presently, but within the
allowed range of Eurogroup’s ROHS.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 / 5 2008
Huajing Discrete Devices
4 Electrical Characteristics
Maximum Ratings Except for Other Prescription,Ta= 25℃
Parameter Note
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current Power Dissipati...