2SD2603(3DD2603)
NPN /SILICON NPN TRANSISTOR
：。
Purpose: Power out amplifier applications.
：,。 Features: High VCEO,lo...
2SD2603(3DD2603)
NPN /SILICON
NPN TRANSISTOR
：。
Purpose: Power out amplifier applications.
：,。 Features: High VCEO,low V .CE(sat)
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO 100 V
VCEO 100 V
VEBO 5.0 V
IC 5.0 A
PC 2.0 W
PC(TC=25℃)
40 W
Tj 150 ℃
Tstg -55～150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
ICBO IEBO hFE VCE(sat) fT
VCB=100V VEB=5.0V VCE=5.0V IC=3.0A VCE=5.0V
IE=0 IC=0 IC=1.0A* IB=0.3A* IC=500mA f=1.0MHz
Min
60 10
Rating
Typ
Max
20
20
200
1.0
Unit
μA μA
V MHz
*:/pulse test.
hFE /hFE classifications: R:60～120 O:100～200
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
2SD2603(3DD2603)
FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
...
