C3528

SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION ·With TO-3PFa package ·High collector current ·Low saturation voltage APPLICATIONS ·For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Product Specification 2SC3528 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current ICP Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature TC=25 Ta=25 VALUE 500 400 7 20 30 6 125 3 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC3528 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=25mH 400 V VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A VBE(sat) Base-emitter saturation voltage IC=10A; IB=2A ICBO Collector cut-off current VCB=500V; IE=0 1.0 V 1.5 V 0.1 mA IEBO hFE-1 Emitter cut-off current DC current gain VEB=7V; IC=0 IC=2A ; VCE=5V 0.1 mA 15 hFE-2 DC current gain IC=10A ; VCE=5V 10 fT Transition frequency IC=1A ; VCE=10V;f=1.0MHz 15 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=10A; IB1=-IB2=2.0A VCC=125V 1.0...