PFW20N50

Aug 2006 PFW20N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰ Remarkable Switching Characteristics ‰ Unequalled Gate Charge : 90 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V APPLICATION ‰ High current, High speed switching ‰ Suitable for power supplies, adaptors and PFC ‰ SMPS (Switched Mode Power Supplies) PFW20N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) = 0.25 Ω ID = 20 A TO-247 Drain { Gate { ● ◀▲ ● ● Source { TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 20 13 80 ±30 1000 20 25 4.0 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 250 2.0 -55 to +150 300 Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -- 0.24 -- Max. 0.5 -40 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W Aug 2006 Pow...