2SA1016

ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS G S P FORM A IS AVAILABLE Value 120 100 5 50 100 400 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SA1016 Characteristics at Tamb=25 OC DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group F G H Collector Base Breakdown Voltage at -IC=10µA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10µA Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz Noise Peak Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz Symbol hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT COB CNO(ave) CNO(peak) Min. 160 280 480 120 100 5 - - - G S P FORM A IS AVAILABLE Typ. 110 2.2 - - Max. 320 560 960 1 1 0.5 - 35 200 Unit V V V µA µA V MHz pF ...