Ordering number:ENN572E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1016, 1016K/2SC2362, 2362K
High-Voltage Low-Noi...
Ordering number:ENN572E
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1016, 1016K/2SC2362, 2362K
High-Voltage Low-Noise Amp Applications
Package Dimensions
unit:mm 2003B
[2SA1016, 1016K/2SC2362, 2362K]
5.0 4.0 4.0
0.45 0.5 0.45 0.44
0.6 2.0 14.0 5.0
( ) : 2SA1016, 1016K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE
fT
VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows :
Rank
F
G
H
hFE 160 to 320 280 to 560 480 to 960
123 1.3 1.3
1 : Emitter 2 : Collecor 3 : Base SANYO : NP
2SA1016, 2SC2362
(–)120 (–)100
2SA1016K, 2SC2362K
(–)150 (–)120
(–)5 (–)50 (–)100
400 125 –55 to +125
Unit
V V V mA mA mW ˚C ˚C
Ratings min typ max
Unit
(–)1.0 µA
(–)1.0 µA
160*
960*
(110) 130
MHz
(2.2) 1.8
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support sys...
