NSVT45011MW6T3G

NST45011MW6T1G, NSVT45011MW6T3G Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Features Current Gain Matching to 10% Base−Emitter Voltage Matched to 2 mV Drop−In Replacement for Standard Device NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage VCBO 50 V Emitter −Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR−5 = ...