STD5NK50Z
STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z
Datasheet
N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Powe...
Description
STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z
Datasheet
N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages
TAB
I2PAK 1 2 3
TAB
23 1
DPAK
TAB 3
2
TO-220 1
3 12
TO-220FP
TAB
3
IPAK 1 2
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status link STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z STP5NK50ZFP STU5NK50Z
Features
Order codes
VDS
RDS(on) max.
STB5NK50Z-1
STD5NK50ZT4
STP5NK50Z
500 V
1.5 Ω
STP5NK50ZFP
STU5NK50Z
100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected
ID 4.4 A
Package I2PAK DPAK TO-220
TO-220FP IPAK
Applications
Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS2834 - Rev 6 - September 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
...
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