B886

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·Complement to type 2SD1196 ·DARLINGTON ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control. PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SB886 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak PC Collector dissipation CONDITIONS Open emitter Open base Open collector TC=25 Tj Junction temperature Tstg Storage temperature VALUE -110 -100 -6 -8 -12 40 1.75 150 -50~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Product Specification 2SB886 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=? -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -110 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-8mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-8mA -2.0 V ICBO Collector cut-off current IEBO Emitter cut-off current VCB=-80V; IE=0 VEB=-5V; IC=0 -0.1 mA -3.0 mA fT Transition frequency IC=-4A ; VCE=-5V 20 MHz hFE DC current gain IC=-...