GF2304

GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) 3 12 .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) .055 (1.40) .047 (1.20) Top View TGREENNCFHET® 0.031 (0.8) 0.035 (0.9) Pin Configuration 1. Gate 2. Source 3. Drain Dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout max. .004 (0.1) .007 (.180) .003 (.085) .047 (1.20) .035 (0.90) .020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37) .098 (2.5) .091 (2.3) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 04 Features Advanced trench process technology High density cell design for ultra-low on-resistance Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities Compact and low profile Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2) TA = 25°C TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance(2) VDS VGS ID IDM PD TJ, Tstg RθJA 30 ± 20 2.5 10 1.25 0.80 –55 to +150 100 Notes: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu) Unit V V A A W °C °C/W 5/3/01 GF2304 N-Channel Enhancement-Mode MOSFET VD...