TFF10N60

TFF10N60 ® TAK CHEONG N-Channel Power MOSFET 10A, 600V, 0.75Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. FEATURES ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode. ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol Parameter VDSS VGSS Drain- Source Voltage Gate-Source Voltage Drain Current ID Continuous Drain Current Tc=100℃ IDM Drain Current Pulsed Power Dissipation PD Derating Factor above 25℃ (Note 2) EAS Single Pulsed Avalanche Energy (Note 1) EAR Repetitive Avalanche Energy (Note 2) TJ Operating Junction Temperature Tstg Storage Temperature Range Notes: 1. L=10mH, IAS=8.0A, VDD=50V, RG=50Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Number: DB-221 May 2010, Revision A SEMICONDUCTOR 1 2 3 TO-220FP ...