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C5194

NEC

2SC5194

DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low V...


NEC

C5194

File Download Download C5194 Datasheet


Description
DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5194-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5194-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 150 150 –65 to +150 UNIT V V V mA mW ˚C ˚C 0.9±0.1 2.0±0.2 (1.25) 0.60 0.65 0.3 0.4 +0.1 –0.05 0.3 +0.1 –0.05 12 T88 PACKAGE DRAWINGS (Unit: mm) 2.1±0.2 1.25±0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter 0 to 0.1 43 0.15 +0.1 –0.05 0.3 +0.1 –0.05 0.3 +0.1 –0.05 (1.3) This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity. Doc...




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