DATA SHEET
SILICON TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES • Low V...
DATA SHEET
SILICON
TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
FEATURES Low Voltage Operation, Low Phase Distortion Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
2SC5194-T1
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape.
2SC5194-T2
3 Kpcs/Reel
Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg
RATING 9 6 2
100 150 150 –65 to +150
UNIT V V V
mA mW ˚C ˚C
0.9±0.1
2.0±0.2
(1.25)
0.60 0.65
0.3
0.4
+0.1 –0.05
0.3
+0.1 –0.05
12
T88
PACKAGE DRAWINGS (Unit: mm)
2.1±0.2 1.25±0.1
PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter
0 to 0.1
43
0.15
+0.1 –0.05
0.3
+0.1 –0.05
0.3
+0.1 –0.05
(1.3)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
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