Document
Technical Data Sheet
1.9mm Round Subminiature “Gull Wing” Lead Phototransistor
Features
․Fast response time ․High photo sensitivity ․Small junction capacitance ․Compatible with infrared and vapor phase reflow solder process. ․Pb free ․The product itself will remain within RoHS compliant version.
Descriptions
․PT91-21B/TR7 is a phototransistor in miniature SMD package which is molded in black plastic with spherical top view lens. The device is spectrally matched to infrared emitting diode.
PT91-21B/TR7
Applications
․Miniature switch
․Counters and sorter
․Position sensor
․Infrared applied system
Device Selection Guide
LED Part No.
Chip Material
PT Silicon
Lens Color
Black
Everlight Electronics Co., Ltd. Device No:DTT-091-003
http:\\www.everlight.com Prepared date:07-25-2006
Rev 2
Page: 1 of 10
Prepared by:Jaine Tsai
Package Dimensions 1.9±0.2
2.5±0.1
0.55±0.1
4.0±0.2
R0.8±0.1
1.1±0.1 1.4±0.1
0.4 ±0.1
2.0±0.2
PT91-21B/TR7
Collector Emitter
0.65±0.1 1.4±0.1 1.3±0.1
2.7±0.2
+0.13 -0
0.15±0.05
0.83
0.3±0.1
Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.1mm
0.75±0.1
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Collector-Emitter Voltage Emitter-Collector-Voltage Collector Current Operating Temperature Storage Temperature Soldering Temperature Power Dissipation at(or below) 25℃Free Air Temperature
VCEO VECO
IC Topr Tstg Tsol Pc
30 5 20 -25 ~ +85 -40 ~ +100 260 75
Notes: *1:Soldering time≦5 seconds.
Units V V mA ℃ ℃ ℃ mW
Everlight Electronics Co., Ltd. Device No:DTT-091-003
http:\\www.everlight.com Prepared date:07-25-2006
Rev 2
Page: 2 of 10
Prepared by:Jaine Tsai
PT91-21B/TR7
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Condition
Rang Of Spectral Bandwidth
10%λP
---
Wavelength Of Peak Sensitivity
λP
---
Collector-Emitter Breakdown Voltage
BVCEO
IC=100µA Ee=0mW/cm2
Min Typ Max Unit 730 --- 1100 nm --- 940 --- nm
30 --- --- V
Emitter-Collector Breakdown Voltage
BVECO
IE=100µA Ee=0mW/cm2
5
--- --- V
Collector-Emitter Saturation Voltage
Collector Dark Current
VCE(sat) ICEO
IC=2mA Ee=1m W/cm2
VCE=20V Ee=0mW/cm2
--- --- 0.4 V --- --- 100 nA
On State Collector Current
IC(ON)
VCE=5V Ee=1mW /cm2
1.0 1.5
mA
Rise Time Fall Time
tr
VCE=5V
--- 15 ---
IC=1mA
µS
tf
RL=1000Ω
--- 15 ---
Everlight Electronics Co., Ltd. Device No:DTT-091-003
http:\\www.everlight.com Prepared date:07-25-2006
Rev 2
Page: 3 of 10
Prepared by:Jaine Tsai
Typical Electro-Optical Characteristics Curves Fig.1Collector Power Dissipation vs.
Ambient Temperature
100
80
60
40
20
0 -25 0
25 50 75 85 100
Fig.3 Relative Collector Current vs. Ambient Temperature
160 140 2 120 100 80 60 40 20
0 0 10 20 30 40 50 60 70
PT91-21B/TR7
Fig.2 Spectral Sensitivity
1.0 Ta=25°C
0.8 0.6
0.4
0.2
0 700 800 900 1000 1100 1300
Fig.4 Collector Current vs. Irradiance
10
C 1
0.1
0.01
0.001
0.01 0.1 1
10
2
Everlight Electronics Co., Ltd. Device No:DTT-091-003
http:\\w.
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