N-channel MOSFET
MMFT70R380P Datasheet
MMFT70R380P
700V 0.38Ω N-channel MOSFET
Description
MMFT70R380P is power MOSFET using magnachip...
Description
MMFT70R380P Datasheet
MMFT70R380P
700V 0.38Ω N-channel MOSFET
Description
MMFT70R380P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 750 0.38
3 11 30
Unit V Ω V A nC
Package & Internal Circuit D
G DS
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters
Ordering Information
Order Code
Marking Temp. Range
MMFT70R380PTH T70R380P -55 ~ 150℃
Package TO-220FT
Packing Tube
RoHS Status Halogen Free
Nov. 2013 Revision 1.0
1 MagnaChip Semiconductor Ltd.
MMFT70R380P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter Drain – Source voltage Gate – Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness
Symbol VDSS VGSS
ID
IDM PD EAS dv/dt
Rating 700 ±30 11 7 33 32.4 215 50
Unit V V A A A W mJ
V/ns
Note
TC=25℃ TC=100℃
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction temperature
1) Pulse...
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