IRFR1018EPbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97129 IRFR1018EPbF IRFU1018EPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: max. 8.4m: G ID (Silicon Limited) 79A c S ID (Package Limited) 56A D-Pak I-Pak IRFR1018EPbF IRFU1018EPbF G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt TJ TSTG Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g Thermal Resistance Symbol Parameter RθJC RθJA RθJA Junction-to-Case k Junction-to-Ambient (PCB Mount) jk Junction-to-Ambient k Notes  through ‰ are on page 2 www.irf.com D Drain Max. 79c 56c 56 315 110 0.76 ± 20 21 -55 to + 175 300 S Source Units A W W/°C V V/ns °C 88 47 11 Ty...