AS098C60W

AS098C60W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features Applications Output Power: 60 W Laser Pumping 920-980 nm Emission Wavelength Medical Usage Spectral Width: ≤4 nm High power laser diode applications High Reliability, High Efficiency CW stack arrays adopt micro-channel package Specifications (25°C) Item Optical Specifications CW Output Power Output Power / Bar Array Length Center Wavelength Wavelength Tolerance Spectral Width Package Style Bar Length Number of Bars Wavelength Temperature Coefficient Beam Divergence Electrical Specifications Slope Efficiency Conversion Efficiency Threshold Current Operating Current Operating Voltage Absolute Maximum Ratings Reverse Voltage Operating Temperature Storage Temperature Symbol PO PS L λC Δλ θ┴×θ║ ES NS ITH IF UF UR TOP TSTG Value 60 20 10 920-980 ±5 ≤4 Micro Channel 1.6 3 0.3 40x8 ≥ 0.8 ≥ 30% ≤ 10 ≤ 30 ≤6 2.5 +10 … +40 -40 ... +85 Unit W W mm nm nm nm mm nm/°C deg W/A A A V V °C °C 20.09.2010 AS098C60W 1 of 2 Package Dimensons Micro Channel (Unit:mm) Notes 1. Caution! Don't look at the laser beam directly, because it's harmful to eyes. 2. The storage temperature is between -40 and 85 °C. 3. Under normal circumstances, the higher the temperature is, the shorter the life of semiconductor laser will be. It is recommended to use lasers under TEC cooling or in airconditioned room. 4. To use a laser diode in following sequences: Turn on the power supply; connect to the lase...