N-Channel MOSFET
4A, 600V, N
FQP4N60C FQPF4N60C
H4N60P H4N60F
4N60
H HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
4N60 Series
N...
Description
4A, 600V, N
FQP4N60C FQPF4N60C
H4N60P H4N60F
4N60
H HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
4N60 Series
N-Channel MOSFET
1000Pcs
5000Pcs
■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 15nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested Package: TO-220AB & TO-220F
ID=4A BVDSS=600V RDS(on)=2.0Ω
■ 、、、、、RoHS
■ 、LCD、LED、、UPS、 、、、、、、 、、
■ TO-220P TO-220AB() TO-220F TO-220FP()
4N60 Series Pin Assignment
3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source
2D
Series Symbol:
1G
3S
■ Absolute Maximum Ratings(TC=25℃ unless otherwise specified)
Symbol
Parameter
VDSS
ID
IDM VGS EAS IAR EAR
Drain-Source Voltage Drain Current-Continuous (TC=25℃) Drain Curren-Continuous (TC=100℃)
Drain Current – Pulsed (Note 1) Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature ( TO-220F )
...
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