H4N60P

4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs 5000Pcs ■Features 　Originative New Design 　Superior Avalanche Rugged Technology 　Robust Gate Oxide Technology 　Very Low Intrinsic Capacitances 　Excellent Switching Characteristics 　Unrivalled Gate Charge: 15nC(Typ.) 　Extended Safe Operating Area 　Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 　100% Avalanche Tested 　Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω ■ 　、、、、、RoHS ■ 　、LCD、LED、、UPS、 　、、、、、、 　、、 ■ 　TO-220P TO-220AB（） 　TO-220F TO-220FP（） 4N60 Series Pin Assignment 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1G 3S ■ Absolute Maximum Ratings（TC=25℃ unless otherwise specified） Symbol Parameter VDSS ID IDM VGS EAS IAR EAR Drain-Source Voltage Drain Current－Continuous (TC=25℃) Drain Curren－Continuous (TC=100℃) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 　 * Drain current limited by maximum junction temperature （ TO-220F ） ...