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4N60F Dataheets PDF



Part Number 4N60F
Manufacturers GFD
Logo GFD
Description 600V N-Channel MOSFET
Datasheet 4N60F Datasheet4N60F Datasheet (PDF)

600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 4N60/4N60F VDSS RDS(ON) ID 600V 2.5Ω 4A Features • 4A, 600V, RDS(on) = 2.5Ω @V.

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 4N60/4N60F VDSS RDS(ON) ID 600V 2.5Ω 4A Features • 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 4N60/4N60F TO-220/220F 0GFD www.goford.cn TEL:0755-86350980 FAX:0755-86350963 4N60/4N60F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 4N60 4N60F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 600 4.0 4.0 2.4 2.4 IDM Drain Current- Pulsed (Note 1) 16 16 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) 160 Units V A A A V mJ EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD TJ, TSTG TL Power Dissipation (TC = 25°C) Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 100 33 0.8 0.26 -55 to +150 300 W W/°C °C °C Thermal Characteristics Symbol Parameter 4N60 4N60F Units RθJC Thermal Resistance, Junction-to-Case 1.25 3.79 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W www.goford.cn TEL:0755-86350980 FAX:0755-86350963 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions 4N60/4N60F Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ Breakdown Voltage Temperature ID = 250 µA, Referenced to ∆TJ Coefficient 25°C -- 0.6 -- IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS =480 V, TC = 125°C -- -- 1 -- -- 10 V/°C µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VDS = VGS, ID= 250 µA 2.0 -- 4.5 V VGS = 10 V, ID = 2.0 A -- 2.0 2.5 Ω Dynamic Characteristics Ciss Input Capacitance -- 560 -- pF Coss Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Crss Reverse Transfer Capacitance www.goford.cn TEL:0755-86350980 FAX:0755-86350963 -- 55 -- pF -- 7 -- pF 4N60/4N60F Switching Characteristics td(on) Turn-On Delay Time -- 10 -- ns tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 300 V, ID = 4A, RG = 25 Ω -- 40 -- ns -- 40 -- ns tf Turn-Off Fall Time (Note 4, 5) -- 50 -- ns Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge -- 16 -- VDS = 480 V, ID = 4 A, VGS = 10 V -- 2.5 -- (Note 4, 5) -- 6.5 -- nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A VSD Drain-Source Diode Forward Voltage VGS = 0 V,IS = 4A -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V,IS = 4 A, dIF / dt = 100 A/µs -- 280 -- ns (Note 4) -- 1.8 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 20 mH, IAS = 4 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.goford.cn TEL:0755-86350980 FAX:0755-86350963 Typical Characteristics 4N60/4N60F Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.goford.cn TEL:0755-86350980 FAX:0755-86350963 Typical Characteristics (Continued) 4N60/4N60F Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature I , Drain Current [A] D Figure 9-1. Maximum Safe Operating Area for TSP4N60M 5 4 3 2 1 205 50 75 100 125 150 T , Case Temperature [? ] C Figure 10. Maximum Drain Current vs Case Temperature Figure 9-2. Maximum Safe Operating Area for TSF4N60M www.goford.cn TEL:0755-86350980 FAX:0755-86350963 Typical Characteristics (Continued) 4N60/4N60F Figure 11-1. Transient Thermal Response Curve for TSP4N60M Figure 11-2. Transient Thermal Response Curve for TSF4N60M www.goford.cn TEL:0755-86350980 FAX:0755-86350963 4N60/4N60F Gate Charg.


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