Document
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology.
4N60/4N60F
VDSS RDS(ON)
ID
600V
2.5Ω
4A
Features
• 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
4N60/4N60F TO-220/220F 0GFD
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4N60/4N60F
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
4N60
4N60F
VDSS ID
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)
600
4.0 4.0 2.4 2.4
IDM Drain Current- Pulsed
(Note 1)
16
16
VGSS
Gate-Source Voltage
± 30
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
Units V A A A
V
mJ
EAR Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD TJ, TSTG
TL
Power Dissipation (TC = 25°C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
100 33 0.8 0.26
-55 to +150
300
W W/°C °C
°C
Thermal Characteristics
Symbol
Parameter
4N60
4N60F
Units
RθJC
Thermal Resistance, Junction-to-Case
1.25
3.79
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5 -- °C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
4N60/4N60F
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
600 --
--
V
∆BVDSS/ Breakdown Voltage Temperature ID = 250 µA, Referenced to
∆TJ Coefficient
25°C
-- 0.6 --
IDSS Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V VDS =480 V, TC = 125°C
-- --
1
-- -- 10
V/°C µA µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
-- -- 100 nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
VDS = VGS, ID= 250 µA
2.0 -- 4.5
V
VGS = 10 V, ID = 2.0 A
-- 2.0 2.5
Ω
Dynamic Characteristics
Ciss Input Capacitance
-- 560 --
pF
Coss Output Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
Crss Reverse Transfer Capacitance
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-- 55 --
pF
-- 7 -- pF
4N60/4N60F
Switching Characteristics
td(on)
Turn-On Delay Time
-- 10 --
ns
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 300 V, ID = 4A, RG = 25 Ω
-- 40 --
ns
-- 40 --
ns
tf Turn-Off Fall Time
(Note 4, 5)
-- 50 --
ns
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
-- 16 --
VDS = 480 V, ID = 4 A, VGS = 10 V
--
2.5
--
(Note 4, 5)
-- 6.5 --
nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- 4.0
A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 16 A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V,IS = 4A
-- -- 1.5 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V,IS = 4 A, dIF / dt = 100 A/µs
-- 280 -- ns
(Note 4) -- 1.8
-- µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 20 mH, IAS = 4 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
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Typical Characteristics
4N60/4N60F
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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Typical Characteristics (Continued)
4N60/4N60F
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
I , Drain Current [A]
D
Figure 9-1. Maximum Safe Operating Area for TSP4N60M
5 4 3 2 1 205 50 75 100 125 150
T , Case Temperature [? ] C
Figure 10. Maximum Drain Current vs Case Temperature
Figure 9-2. Maximum Safe Operating Area for TSF4N60M
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Typical Characteristics (Continued)
4N60/4N60F
Figure 11-1. Transient Thermal Response Curve for TSP4N60M
Figure 11-2. Transient Thermal Response Curve for TSF4N60M
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4N60/4N60F
Gate Charg.