N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect ...
N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
ME25N06(-G)
FEATURES
● RDS(ON)≦62mΩ@VGS=10V ● RDS(ON)≦86mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-252) Top View
e Ordering Information: ME25N06 (Pb-free)
ME25N06-G (Green product)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25℃
Current(Tj=150℃)
TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case *
Symbol VDSS VGSS
ID
IDM
PD
TJ RθJC
* The device mounted on 1in2 FR4 board with 2 oz copper
Rating 60 ±25 16 13 65 25 16
-55 to 150 Steady State
5
Unit V V
A
A
W
℃ ℃/W
Dec,2008-Ver1.0
01
ME25N06(-G)
N-Channel Enhancement MOSFET
Electrical Character...