Document
AON7702A
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
30V 36A < 10mΩ < 13mΩ
100% UIS Tested 100% Rg Tested
Top View
DFN 3x3A Bottom View
Pin 1
Top View
18 27 36 45
G
D
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±12 36 22 80 13.5 11 15 11 23 9 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 30 60 4.5
Max 40 75 5.4
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev 1: Feb. 2011
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
0.5 100
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.65 2.1
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
VGS=10V, ID=13A
8.2 10
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
12.5 15
VGS=4.5V, ID=11A
9.9 13
gFS Forward Transconductance
VDS=5V, ID=13A
80
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.4 0.7
IS Maximum Body-Diode Continuous Current
30
V
mA
nA V A
mΩ
mΩ S V A
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
930 1170 1400 90 128 170 45 89 125 0.7 1.4 2.1
pF pF pF Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16 20 24 nC
Qg(4.5V) Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=13A
7 8.7 10.5 nC 3.2 nC
Qgd Gate Drain Charge
3 nC
tD(on)
Turn-On DelayTime
6 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.2Ω, 2.4 ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
23 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs
5.5 7 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
5 6.5 8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Feb. 2011
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
35 30 25 20 15 10
5 0
0
10V 2.75V 3V
2.5V
VGS=2.25V
1234
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
5
ID(A)
35 VDS=5V
30
25
20
15
10 125°C 25°C
5
0 1.5 1.75 2 2.25 2.5 2.75 VGS(Volts) Figure 2: Transfer Characteristics (Note E)
3
RDS(ON) (mΩ)
12
11 VGS=4.5V
10
9 VGS=10V
8
7
6 1 6 11 16.