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AON7702A Dataheets PDF



Part Number AON7702A
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Datasheet AON7702A DatasheetAON7702A Datasheet (PDF)

AON7702A 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 10mΩ < 13mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3A Bottom View Pin 1 Top Vi.

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AON7702A 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 10mΩ < 13mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3A Bottom View Pin 1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 36 22 80 13.5 11 15 11 23 9 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 4.5 Max 40 75 5.4 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1: Feb. 2011 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 0.5 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.65 2.1 ID(ON) On state drain current VGS=10V, VDS=5V 80 VGS=10V, ID=13A 8.2 10 RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.5 15 VGS=4.5V, ID=11A 9.9 13 gFS Forward Transconductance VDS=5V, ID=13A 80 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.7 IS Maximum Body-Diode Continuous Current 30 V mA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 930 1170 1400 90 128 170 45 89 125 0.7 1.4 2.1 pF pF pF Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=13A 7 8.7 10.5 nC 3.2 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.2Ω, 2.4 ns tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs 5.5 7 8.5 ns Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 5 6.5 8 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Feb. 2011 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 35 30 25 20 15 10 5 0 0 10V 2.75V 3V 2.5V VGS=2.25V 1234 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 ID(A) 35 VDS=5V 30 25 20 15 10 125°C 25°C 5 0 1.5 1.75 2 2.25 2.5 2.75 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 3 RDS(ON) (mΩ) 12 11 VGS=4.5V 10 9 VGS=10V 8 7 6 1 6 11 16.


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