APT50GS60BRDQ2

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise TO-247 D3PAK and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode. Features Typical Applications APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) Fast Switching with low EMI Very Low EOFF for Maximum Efficiency Short circuit rated Low Gate Charge ZVS Phase Shifted and other Full Bridge Half Bridge High Power PFC Boost Welding Single die IGBT with separate DQ diode die Tight parameter distribution Induction heating Easy paralleling High Frequency SMPS RoHS Compliant Absolute Maximum Ratings Symbol Parameter Rating IC1 Continuous Collector Current TC = @ 25°C IC1 Conti...