650nm Laser Diode Chips
650nm Red Laser Diode Chips SLD-650-P5-C-300-04
■Specifications (1) Size : (2) Device: (3) Stru...
650nm Laser Diode Chips
650nm Red Laser Diode Chips SLD-650-P5-C-300-04
■Specifications (1) Size : (2) Device: (3) Structure:
250*300*100μm Laser diode bare chip Double channel , single ridge waveguide
■External dimensions(Unit :μm)
SLD-650-P5-C-300-04 UNION OPTRONICS CORP.
P-electrode and N-electrode are both gold pad. Channel depth : 0.9 〜 1.0 μm
■Absolute Maximum Ratings(Tc=25℃)
Parameter
Symbol
Optical Output
Po
Reverse Voltage
Vr
Operating Temperature
Top
Storage Temperature
Tstg
Rating 7 2
-10〜+40 -15〜+85
Unit mW V ℃
℃
3156
UNION OPTRONICS CORP.
No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan, R.O.C.
TEL : 886-3-485-2687
FAX : 886-3-475-4378
E-mail :
[email protected]
Revise: 2006/03/01
650nm Laser Diode Chips
SLD-650-P5-C-300-04 UNION OPTRONICS CORP.
■Electrical and Optical Characteristics(Tc=25℃)
Parameter
Symbol Condition Min. Typ. Max. Unit
Threshold Current
Ith -
- 13
mA
Operating Current
Iop Po=5mW
-
19 30 mA
Operating Voltage
Vop -
- 2.2 2.8 Volt
Slope Efficiency
η
3mW-1mW I3mW-I1mW
0.4
0.9
- mW/mA
Beam Divergence Parallel
θ// Po=5mW 5
7 12 deg.
(FWHM)
Perpendicular θ⊥ Po=5mW 30 38 42 deg.
Lasing Wavelength
λ Po=5mW 640 652 665 nm
◎θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value.
◎Measuring Conditions : Pulse width=5μs , Duty cycle=1%
■Typical characteristic curves
LOipgthictaPl OowuteprutvPs.oFwoerrwva.sr.dFoCrwurarrdenCturrent
6 10℃ 25℃ 40℃ 50℃
4
Forward Voltage v...