635nm Laser Diode Chips
635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-05
■Specifications
(1) Size : (2) Device: (3)...
635nm Laser Diode Chips
635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-05
■Specifications
(1) Size : (2) Device: (3) Structure:
300*300*100μm Laser diode bare chip Multi-step growth
■External dimensions(Unit :μm)
635-P5-C-N-RG-300-05 UNION OPTRONICS CORP.
P-electrode and N-electrode are both gold pads.
■Absolute Maximum Ratings(Tc=25℃)
Parameter
Symbol
Optical Output
Po
Reverse Voltage
Vr
Operation Temperature
Top
Storage Temperature
Tstg
Rating 7 2
-10〜+40 -15〜+85
Unit mW V
℃
℃
3156
UNION OPTRONICS CORP.
No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan, R.O.C.
TEL : 886-3-485-2687
FAX : 886-3-475-4378
E-mail :
[email protected]
Revise: 2006/03/01
635nm Laser Diode Chips
635-P5-C-N-RG-300-05 UNION OPTRONICS CORP.
■Electrical and Optical Characteristics(Tc=25℃)
Parameter
Symbol Condition Min. Typ. Max.
Threshold Current
Ith -
28 40
Operating Current
Iop Po=5mW
37 50
Operating Voltage
Vop -
2.3 2.6
Slope Efficiency Beam Divergence Parallel
η 3.75mW-1.25mW 0.3 I3.75mW-I1.25mW
0.5
θ// Po=5mW
6
8 10
(FWHM)
Perpendicular
θ⊥ Po=5mW
30
35
38
Lasing Wavelength
λ Po=5mW 620 635 640
◎θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value.
◎Measuring conditions : Pulse width=5μs , Duty cycle=1%
Unit mA mA Volt
mW/mA
deg. deg. nm
■Typical characteristic curves
Optical Output Power (mW)
Optical Output Power v.s. Forward Current
7
10℃ 25℃ 35℃
50℃
6
5
4
3
2
1
0 0 10 20 30 40 50 60
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