EYP-DFB-0852-00050-1500-BFY02-00

DATA SHEET EYP-DFB-0852-00050-1500-BFY02-0x0x DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure Revision 106 1.06 28.11.2011 28.11.2011 page 1 from 5 RRWWEE//RRWWLL BAL BAL DFDBF/BD/BDRBR TPTLP/LT/PTAPA General Product Information Product 852 nm DFB Laser with hermetic Butterfly Housing Monitor Diode, Thermoelectric Cooler and Thermistor PM Fiber with angle-polished Connector High-reliable fully Space-qualified Package Application Spectroscopy Metrology Cs Spectroscopy (Variant ...-0005) Absolute Maximum Ratings Storage Temperature Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Reverse Voltage Output Power TEC Current TEC Voltage Symbol Unit min typ max TS °C -40 TC °C -40 TLD °C 10 IF mA VR V Popt mW ITEC A VTEC V 85 85 50 200 2 55 1.8 3.2 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the device. Recommended Operational Conditions Operational Temperature at Case Operational Temperature at Laser Chip Forward Current Output Power Symbol Unit min typ max TC °C -20 TLD °C 15 IF mA Popt mW 10 65 45 180 50 Measurement Conditions / Comments measured by integrated Thermistor ex fiber Characteristics at Begin Of Life Parameter Center Wavelength Spectral Width (FWHM) Temperature Coefficient of Wavelength Current Coefficient of Wavelength Output Power @ IF =180 mA Symbol lC Dn dl / dT dl / dI Popt Unit nm MHz nm / K nm / mA mW min 851 50 typ ...