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TPN1110ENH
Silicon N-channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1110ENH 1. Applications High-Efficiency DC-DC Converters Switching Voltage
Regulator
s 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement ...
Toshiba
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TPN1110ENH
Silicon N-channel MOSFET
- Toshiba
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