Naina Semiconductor Ltd.
MUR30005CT thru MUR30020CTR
Features
Super Fast Recovery Diode, 300A
• Dual Diode Construct...
Naina Semiconductor Ltd.
MUR30005CT thru MUR30020CTR
Features
Super Fast Recovery Diode, 300A
Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current Non-repetitive forward surge current, half sine-wave
VDC IF(AV)
IFSM
TC ≤ 140 oC TC = 25 oC
50 300
1500
MUR30010CT(R) 100
70 100 300
1500
MUR30020CT(R) 200
140 200 300
1500
Units V
V V A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
DC forward voltage
VF
IF = 50 A TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC VR = 50 V
TJ = 125oC
25 1
Maximum Reverse Recovery Time
IF = 0.5A trr IR = 1.0A
IRR = 0.25A
90
MUR30010CT(R) 1.3 25 1
90
MUR30020CT(R) 1.3 25 1
90
Units V µA mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR30005CT(R)
Thermal resistance junction to case
RthJ-C
1.0
Operating, storage temperature range
TJ , Tstg
- 40 to +175
MUR30010CT(R) 1.0
- 40 to +175
MUR30020CT(R) 1.0
- 40 to +175
Units oC/W
oC
1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
MU...