MUR10040CTR

Naina Semiconductor Ltd. MUR10040CT thru MUR10060CTR Features Super Fast Recovery Diode, 100A Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC Average forward current IF(AV) Non-repetitive forward surge current, half sinewave IFSM Conditions TC ≤ 140 oC TC = 25 oC MUR10040CT(R) 400 280 400 100 400 MUR10060CT(R) 600 420 600 100 400 Units V V V A A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions DC forward voltage VF IF = 50 A TJ = 25 oC DC reverse current VR = 50 V IR TJ = 25 oC VR = 50 V TJ = 125oC Maximum Reverse Recovery Time IF = 0.5A trr IR = 1.0A IRR = 0.25A MUR10040CT(R) 1.3 25 1 90 MUR10060CT(R) 1.3 25 1 110 Units V µA mA nS Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol Thermal resistance junction to case RthJ-C Operating, storage temperature range TJ , Tstg MUR10040CT(R) MUR10060CT(R) Units 1.0 1.0 oC/W - 40 to +175 - 40 to +175 oC 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com Naina Semiconductor Ltd. Package Outline MUR10040CT thru MUR10060CTR ALL DIMENSIONS IN MM Ordering Table MUR 1 100 2 40 3 CT 4 1 ...